Abstract: Memories are an main part of most of the digital devices and hence reducing power consumption and area reduction of memories is very important issue as of today to improve system performance, efficiency, reliability. A transistorized SRAM cell is conventionally used as the memory cell and memristor behaves as a switch, much like a transistor. However, unlike the transistor, it is a two-terminal device and does not require power to retain either of its two states, they save the data when the power supply is lost, ensuring preservation of critical information. Note that a memristor change its resistance between two values and this is achieved via the movement of mobile ionic charge within an oxide layer, furthermore, these resistive states are non-volatile. This project focuses on new approach towards the design and modeling of Memristor based CAM (MCAM) and 12T MTCMOS SRAM cell. Our proposed work is, new memory model have been determined and compared with existing models and proposed cell design dissipates less power at different temperatures than existing models. Simulation did on the basis of Microwind 3.1 Back End CMOS technology to reduce power consumption and enhance data stability and system efficiency.

Keywords: SRAM, MOS, CAM, MTCMOS, nMOS, BSIM4